Method and structure of monolithically integrated ic-mems oscillator using ic foundry-compatible processes

ABSTRACT

A three-dimensional integrated circuit device includes a first substrate having a first crystal orientation comprising at least one or more PMOS devices thereon and a first dielectric layer overlying the one or more PMOS devices. The three-dimensional integrated circuit device also includes a second substrate having a second crystal orientation comprising at least one or more NMOS devices thereon; and a second dielectric layer overlying the one or more NMOS devices. An interface region couples the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 12/634,634, filed Dec. 9, 2009, which is acontinuation application of U.S. patent application Ser. No. 12/499,029,filed Jul. 7, 2009, which claims priority to U.S. Provisional PatentApplication No. 61/079,110, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/079,112, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/079,113, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/079,115, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/079,116, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/079,117, filed Jul. 8, 2008, U.S. Provisional PatentApplication No. 61/084,223, filed Jul. 28, 2008, and U.S. ProvisionalPatent Application No. 61/084,226, filed Jul. 28, 2008, all of which arecommonly owned and are incorporated in their entirety herein byreference for all purposes.

BACKGROUND OF THE INVENTION

The present invention is related to transistor devices. Moreparticularly, the present invention provides a method and device forfabricating three-dimensional transistors with hybrid crystalorientations. Merely by way of example, the methods can be applied toCMOS, bipolar, diodes, etc.

Conventional transistors are fabricated on a surface of a siliconsubstrate, i.e. planar devices. A complementarymetal-oxide-semiconductor (CMOS) device is a type of such planar devicesthat are typically fabricated side by side on a (100) silicon substrate.It is well known that electron mobility is highest for a (100) siliconsurface with a <110> channel direction, while hole mobility is highestfor a (110) silicon surface with a <110> channel direction.

Thus, it is desirable to fabricate a transistor device in a threedimensional manner with hybrid crystal orientation to improve densityand performance of IC devices.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to integrating a resonating mechanicaldevice on top of an IC substrate monolithically using IC-foundrycompatible processes. In an embodiment, the IC substrate is completedfirst using standard IC processes. A thick silicon layer is added on topof the IC. A subsequent patterning step defines a mechanical structurefor resonating function. The mechanical device can be encapsulated by athick insulating layer at the wafer level.

According to an embodiment of the present invention, a method forfabricating a monolithic integrated circuit and MEMS resonator deviceincludes the following steps. The method includes providing a firstsemiconductor substrate having a first surface region and forming one ormore CMOS integrated circuit device provided on a CMOS integratedcircuit device region overlying the first surface region. The CMOSintegrated circuit device region has a CMOS surface region. A dielectriclayer is formed overlying the CMOS surface region. A secondsemiconductor substrate having a second surface region is joined to theCMOS surface region by bonding the second surface region to thedielectric layer. The second semiconductor substrate is thinned to adesired thickness while maintaining attachment to the dielectric layer.The method includes forming one or more via structures within one ormore portions of the desired thickness of the second semiconductorsubstrate, and forming a conformal coating of metal material within theone or more via structures. The method also includes forming one or morefree standing MEMS structures within one or more portions of the desiredthickness of the second semiconductor substrate. The one or more MEMSstructures are configured to be supported by one or more membersintegrally formed on the desired thickness of the second semiconductorsubstrate to cause the one or more MEMS structures to move in anoscillating manner characterized by a frequency range.

Compared with the incumbent bulk or surface micromachined MEMS inertialsensors, vertically monolithically integrated inertial sensors providedby embodiments of the present invention have one or more of thefollowing advantages: smaller chip size, lower parasitics, highersensitivity, lower power, and lower cost.

Using this architecture and fabrication flow, it is also feasible andcost-effective to make an array of resonators for multiple frequencieson a single chip.

Some embodiments of the present invention relate generally to integratedmicro-machined and integrated circuit devices. More particularly, someembodiments of the present invention provide a sensing device integralwith integrated circuits, such as CMOS integrated circuits, which arefoundry compatible. These embodiments can be applied to a variety ofapplications, such as consumer, security, industrial, and medical.

Pressure sensors have been widely in industry. Conventional pressuresensors are used in consumer, industrial, and medical applications.Examples of consumer applications include gauges for tires, which aremounted on automobiles. Conventional bathroom type weight scales alsouse conventional pressure sensing devices. Industrial applicationsinclude pressure sensors in pipes for processing chemicals, oil, andsemiconductor devices. Medical applications such as blood pressuremonitors also rely upon conventional pressure sensing devices. Althoughhighly successful and widely used, conventional pressure sensors havelimitations in size, performance, and costs.

Specifically, conventional pressure sensors often use conventionalmicromachining techniques, common called “MEMS” techniques.Micromachined or MEMS pressure sensors are fabricated using bulk andsurface micromachining techniques. Such bulk and surface machiningtechniques have limitations. That is, conventional bulk and surfacemachining techniques are often stand alone and are able to producediscrete MEMS based devices. Although highly successful, the MEMS baseddevices still have limitations. These and other limitations aredescribed throughout the present specification and more particularlybelow.

Thus, it is desirable to have an improved MEMS device and moreparticularly pressure sensors.

Some embodiments of the present invention relate to integrating a MEMSpressure sensor on top of a CMOS substrate monolithically usingIC-Foundry compatible processes. In some embodiments, the CMOS substrateis completed first using standard IC processes. A diaphragm is thenadded on top of the CMOS. In one embodiment, the diaphragm is made ofdeposited thin films with stress relief corrugated structure. In anotherembodiment, the diaphragm is made of a single crystal silicon materialthat is layer transferred to the CMOS substrate. In a specificembodiment, the integrated pressure sensor is encapsulated by a thickinsulating layer at the wafer level. The monolithically integratedpressure sensor that adopts IC foundry-compatible processes yields thehighest performance, smallest form factor, and lowest cost. Themonolithically integrated pressure sensor can be used in a variety ofapplications, for example, for integrating a microphone device withsignal processing and logic circuits.

In an embodiment, the present invention provides a pressure sensingdevice that includes a substrate having a surface region, a CMOSintegrated circuit device layer overlying the surface region of thesubstrate, a diaphragm device having one or more surface regionsoverlying the CMOS integrated circuit device layer, and at least one ormore spring devices spatially disposed within a vicinity of the one ormore surface regions of the diaphragm device. Each of the folded springdevices is operably coupled to the one or more surface regions of thediaphragm device.

Other embodiments of pressure sensing devices and methods are describedin more detail below.

Some embodiments of the present invention are related encapsulatingintegrated devices. More particularly, some of the embodiments of thepresent invention provide a method and device using CMOS fabricationtechniques for encapsulating integrated circuits with cavity. Forexample, the encapsulation can be applied to RF integrated circuits,timing circuits, analog circuits, power circuits, SAW, FBAR, or anyother semiconductor devices that are sensitive to ambient interferenceand changes.

High frequency integrated circuits such as RF and timing circuits arewidely used in electronic applications to provide stable frequencyselection or referencing. The stability of these circuits, however, issusceptible to EM interference, noise, moisture, corrosion, and gas fromthe environment.

Thus, it is desirable to improve the stability of timing circuits, RFcircuits, and the like.

In an embodiment, an integrated circuits are completed using standard ICprocesses. A wafer-level hermetic encapsulation is applied to form acavity above the sensitive portion of the circuits using IC-foundrycompatible processes. The encapsulation and cavity provide a hermeticinert environment that shields the sensitive circuits from EMinterference, noise, moisture, gas, and corrosion from the outsideenvironment.

Some embodiments of the present invention is related to battery devices.More particularly, these embodiments provide a method and device usingmicromachining fabrication techniques for fabricating nanometer siliconstructures for battery components.

Conventional lithium batteries use graphite as anode material. Graphitematerial is widely used but has limitations. As an example, conventionalgraphite material has limited capability of holding lithium species,which serve as the electrode material. Although highly successful,drawbacks exist. Other materials have also been proposed for the anodematerial. Silicon material has been proposed for the anode material.Unlike the graphite counterpart, silicon is capable of holding up to tentimes more lithium than graphite. Accordingly, silicon anode materialsmay lead to higher energy densities and longer battery life. Siliconanode materials are, however, prone to swelling and often leads tocracks, and chronic failure. These and other limitations may bedescribed throughout the present specification and more particularlybelow.

Thus, it is desirable to improve battery anode materials.

In an embodiment, micromachined silicon nanopillars are adopted toreplace graphite anode. The silicon nanopillar anode has high energydensity since silicon holds 10× Lithium than graphite. The siliconnanopillar anode also has more surface area that can hold more activematerial into the electrode for fast charging and discharging.

Silicon nanopillars are coated with LiCoO2 to replace LiCoO2 cathode,which more surface area that has high energy capacity and fast chargingand discharging. Micromachined Silicon membrane with nanopillar toreplace the conventional separator made of thin plastic. Silicon isstronger than steel and avoid damage of the separator that shortselectrodes and causes fire. In addition, nanopillar controls ‘wetting’of electrolyte therefore physical contact/separation of electrodes.Silicon membrane potentially contains active IC for controlling batteryoperations. Modularized control of nanopillar array allows intelligentbattery operation for high efficiency. As a result, silicon membranewith nanopillars has no leakage, avoids deep discharge and extendsbattery life.

Some embodiments of the present invention are related to transistordevices. More particularly, these embodiments provide a method anddevice for fabricating three-dimensional transistors with hybrid crystalorientation. Merely by way of example, the methods can be applied toCMOS, bipolar, diodes, etc.

Conventional transistors are fabricated on a surface of a siliconsubstrate, i.e. planar devices. Complementary metal-oxide-semiconductor(CMOS) device are such planar device that are typically fabricated sideby side on a (100) silicon substrate. It is well known that electronmobility is highest for a (100) silicon surface with a <110> channeldirection, while hole mobility is highest for a (110) silicon surfacewith a <110> channel direction.

Thus, it is desirable to fabricate transistor devices in threedimensional manner with hybrid crystal orientation to improve densityand performance of the IC devices.

Some embodiments of the present invention is related to transistordevices. N and P transistors are fabricated on separated siliconsubstrates. In one embodiment, N transistors are fabricated on (100)silicon substrate and P transistors are fabricated on (110) siliconsubstrate. A bonding step joins the two substrates followed by athinning step to remove bulk silicon of one of the substrates. Theresulting structure yield a CMOS device stacked in the verticaldirection with hybrid crystal orientations that maximize the mobility ofboth n-MOS and p-MOS transistors.

Some embodiments of the present invention are related to microneedledevices. More particularly, the embodiments provide a method and deviceusing CMOS and MEMS fabrication techniques for making an integratedmicroneedle device with integrated circuits. Merely by way of example,the technology can be applied to bio and chemical sensing, other bioMEMSapplications.

Microneedle has been proposed for sensing of biomedical conditions anddrug delivery. The conventional microneedle is believed to be promisingand is likely to replace conventional invasive blood sampling and macroneedle injections. In sensing applications, microneedle device enablessampling of the body analyte at the Stratum Corneum and Viable Epidermisinterface through extraction of interstitial fluid. The bioanalytescould be detected vary from monitoring of glucose, lactate to smokingproducts like nicotine, cotinine etc.

Unfortunately, the conventional microneedle technologies have variouslimitations. Sensing and drug delivery use two discrete devices, whichare separate and apart from each other. The separate devices often leadto difficulty in use and efficiencies. Additionally, the conventionalmicroneedle device is typically fabricated using conventional MEMStechnology, which is complex and costly. Conventional MEMS technologyalso is a stand alone operation and cannot be integrated with otherprocesses. Accordingly, microneedle technologies have limited use andare only found in research and development. These and other limitationsare described throughout the present specification and more particularlybelow.

Thus, it is desirable to improve microneedle technology.

Various additional properties, features, and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified cross section diagram of components of a startingIC substrate according to one embodiment of the present invention;

FIG. 2 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 3 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 4 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 5 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 6 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 7 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 8 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 9 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 10 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 11 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 12 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention;

FIG. 13 is a simplified cross section diagram of an alternative methodof controlling silicon layer thickness of a monolithically integratedinertial sensing device according to one embodiment of the presentinvention;

FIG. 14 is a simplified cross section diagram of a alternative method ofcontrolling silicon layer thickness of a monolithically integratedinertial sensing device according to one embodiment of the presentinvention.

FIG. 15 is a simplified diagram of components of a micromachinedpressure sensor according to one embodiment of the present invention;

FIG. 16 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention;

FIG. 17 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention;

FIG. 18 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention;

FIG. 19 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention;

FIG. 20 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention;

FIG. 21 is a simplified cross section diagram of fabrication processflow of a micromachined pressure sensor according to one embodiment ofthe present invention; and

FIG. 22 is a simplified cross section diagram of fabrication processflow of a micromachined pressure sensor according to one embodiment ofthe present invention;

FIG. 23 is a simplified process flow of a wafer-level encapsulation ofintegration circuits according to one embodiment of the presentinvention;

FIG. 24 is a simplified process flow of a wafer-level encapsulation ofintegration circuits according to one embodiment of the presentinvention;

FIG. 25 is a simplified process flow of a wafer-level encapsulation ofintegration circuits according to one embodiment of the presentinvention;

FIG. 26 is a simplified process flow of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention;

FIG. 27 is a simplified cross section of a wafer-level encapsulation ofintegration circuits according to one embodiment of the presentinvention;

FIG. 28 is a simplified cross section of a wafer-level encapsulation ofintegration circuits according to one embodiment of the presentinvention;

FIG. 29 is a simplified chart comparing silicon nanopillar battery toconventional battery according to one embodiment of the presentinvention;

FIG. 30 is a simplified diagram of components of a silicon nanopillarbattery according to one embodiment of the present invention;

FIG. 31 is a simplified diagram of operating modes of a siliconnanopillar battery according to one embodiment of the present invention;

FIG. 32 illustrates electron and hole mobility for different crystalorientations;

FIG. 33 is a simplified cross-sectional diagram illustrating componentsof n-MOS transistor device according to one embodiment of the presentinvention;

FIG. 34 is a simplified cross-sectional diagram illustrating componentsof p-MOS transistor device according to one embodiment of the presentinvention;

FIG. 35 is a simplified diagram illustrating a process of joining then-MOS and p-MOS transistor substrates;

FIG. 36 is a simplified diagram illustrating a process of thinning oneof the transistor substrates;

FIGS. 37-38 are simplified diagrams illustrating a process offabricating three dimensional transistor devices using a cleaving methodaccording to an embodiment of the present invention;

FIG. 39 is a simplified cross section diagram of a microneedle biochipaccording to one embodiment of the present invention;

FIG. 40 is a simplified cross section diagram of components of amicroneedle biochip according to one embodiment of the presentinvention; and

FIG. 41 is a simplified cross section diagram of components of amicroneedle biochip according to one embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 is a simplified cross section diagram of components of a startingIC substrate according to one embodiment of the present invention. Asdepicted, the starting substrate is a fully processed IC wafer. Adielectric layer such as oxide and nitride is deposited on top of a topmetal layer of the IC wafer. The dielectric layer is then patterned toform a structure that provides anchor points for stationary members ofthe mechanical resonating device.

FIG. 2 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, a silicon wafer isbonded to the IC substrate. The bonding methods include but not limitedto: covalent, Spin-on-glass (SOG), Eutectic, and anodic. The bondingtemperature is IC compatible and below 400 C.

FIG. 3 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the silicon substrateis thinned by techniques such as grinding, polishing, and etching. Thefinal thickness of the remaining silicon atop of the IC is preciselymeasured by infrared interferometry method with nano meter accuracy.Infrared wavelength is used because silicon is transparent in thisspectrum.

FIG. 4 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, a VIA hole is etchedinto the silicon and top dielectric layers and stop on the top metallayer. The size of the VIA ranges from 0.5 um to a few micro metersdepending on the thickness of the silicon layer. The profile or sidewallof the VIA is tapered or slopped for better step coverage of subsequentmetallization step.

FIG. 5 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, a metal layer isblanket deposited on the wafer covering the silicon surface as well asthe VIA surface. CVD or PVD recipes are optimized to achieve good stepcoverage of the VIA as well as low stress of the metal film. In oneembodiment, the metal layer is a CVD TiN material that has excellentstep coverage of the VIA. The thickness of the metal ranges from a fewhundreds of angstroms to a few micro meters depending the applicationsrequirements. An optional electroplating step can be used to fill theentire VIA with metals such as Copper or Nickel.

FIG. 6 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the silicon layer ispatterned typically by a DRIE step. The patterned mechanical structureincludes one or more freestanding members and stationary electrodes thatare anchored to the top oxide. The freestanding members have desiredstiffness/compliance that determines the resonate frequency of themechanical resonator. The stationary drive electrodes couple to thefreestanding member electrostatically. The freestanding memberoscillates when applying a periodically voltage waveform between thefreestanding member and the drive electrodes. The movement cause achange in capacitance between the movable freestanding member andstationary sense electrodes. The capacitance change is detected by theintegrated circuits a few micrometer below and fed back to the driveelectrodes to keep the freestanding member oscillating at its resonatefrequency.

FIG. 7 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, an organic sacrificialmaterial is deposited covering the mechanical structure. In oneembodiment, the sacrificial material is a liquid photo resist that isspin coated on the wafer and fill all the VIA holes and trenches. Inanother embodiment, the sacrificial material is a dry film photoresistthat is deposited on the surface of the wafer and does not fill theholes and trenches.

FIG. 8 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the photo resist ispatterned by an exposure and develop lithography process. The exposedarea are non-trench features such as proof mass and anchors.

FIG. 9 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the 1^(st) layer ofthe encapsulation is deposited by a PVD process. The deposition recipeis optimized for non-conforming purpose, which has little step coverageof the sidewall of the exposed photoresist trenches.

FIG. 10 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the sacrificialorganic material is then removed by a dry O2 plasma ashing step. Theremoval of the sacrificial material releases the sensor device and formsthe 1^(st) shell of the encapsulation.

FIG. 11 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, the 2^(nd) layer ofthe encapsulation is deposited onto the 1^(st) layer. The sealingmethods include PVD, spin-on, or spray-on techniques. The sealingmaterials include metal such as Ti, TiN, amorphous silicon,spin-on-glass, spray-on-glass, or a combination of the above. Theambient during sealing is optimized to achieve the highest vacuum levelpossible after sealing. A getter material such as Ti can be deposited asthe 1^(st) layer of the encapsulation and activated later to achievehigher vacuum and cleanness of the ambient environment. After sealingthe holes, an optional CVD dielectric material such as oxide or nitridecan be added onto the encapsulation.

FIG. 12 is a simplified cross section diagram of components of amonolithically integrated inertial sensing device according to oneembodiment of the present invention. As depicted, a etch step opens thebond pad area and expose the bond pads for wire bonding or optionalwafer bumping processes.

FIG. 13 is a simplified cross section diagram of an alternative methodof controlling silicon layer thickness of a monolithically integratedinertial sensing device according to one embodiment of the presentinvention. As depicted in FIG. 13A, the blanket silicon wafer is a SOIwafer with a desired SOI thickness. As illustrated in FIG. 13B, the BOXof the SOI provides an etch stop during the thinning process steps. TheBOX can be then used as a hard mask to define the sensor structure.

FIG. 14 is a simplified cross section diagram of a alternative method ofcontrolling silicon layer thickness of a monolithically integratedinertial sensing device according to one embodiment of the presentinvention. As depicted in FIG. 14A, the blanket silicon wafer has alayer of implanted H2, He, or Ar in a desired thickness in the siliconsubstrate. As illustrated in FIG. 14B, this thickness of silicon isseparated from the bulk at the implant layer. Separation methods includethermal cleave and mechanical cleave. A subsequent polishing or etchingstep smoothens the cleaved surface of the remaining silicon layer.

According to an embodiment of the present invention, a method forfabricating a monolithic integrated circuit and MEMS resonator deviceincludes the following steps. The method includes providing a firstsemiconductor substrate having a first surface region and forming one ormore CMOS integrated circuit device provided on a CMOS integratedcircuit device region overlying the first surface region. The CMOSintegrated circuit device region has a CMOS surface region. A dielectriclayer is formed overlying the CMOS surface region. A secondsemiconductor substrate having a second surface region is joined to theCMOS surface region by bonding the second surface region to thedielectric layer. The second semiconductor substrate is thinned to adesired thickness while maintaining attachment to the dielectric layer.The method includes forming one or more via structures within one ormore portions of the desired thickness of the second semiconductorsubstrate, and forming a conformal coating of metal material within theone or more via structures. The method also includes forming one or morefree standing MEMS structures within one or more portions of the desiredthickness of the second semiconductor substrate. The one or more MEMSstructures are configured to be supported by one or more membersintegrally formed on the desired thickness of the second semiconductorsubstrate to cause the one or more MEMS structures to move in anoscillating manner characterized by a frequency range.

In an embodiment of the above method, the dielectric layer has one ormore patterned regions. In another embodiment, the thinning includes agrinding process to remove a thickness of material from thesemiconductor substrate to expose a ground surface region and furtherincludes subjecting the ground surface region to a polishing process tosmooth the ground surface region to a predetermined surface roughness;and monitoring a thickness of the second substrate during either or boththe grinding process and/or the polishing process.

In another embodiment, the monitoring includes using an interferometerprocess to measure an indication associated with the thickness of thesecond substrate, the interferometer process using a electromagneticradiation in an infrared wavelength range.

In another embodiment, the method also includes forming one or more viastructures within one or more portions of the second semiconductorsubstrate. The one or more via structures extend from the second surfaceregion to a vicinity of the desired thickness. The one or more viastructures are configured as one or more stop structures to form one ormore end point regions of the thinning

In another embodiment, the second semiconductor substrate is an SOIsubstrate having a bulk portion, overlying insulating layer, and singlecrystal device layer. The thinning includes selectively removing thebulk portion of the SOI substrate from the single crystal device layerwhile maintaining attachment to the dielectric layer.

In another embodiment, the thinning includes cleaving a portion of thesecond semiconductor substrate at a cleave region to remove the desiredthickness from the second semiconductor substrate. The cleave region iswithin a vicinity of the desired thickness, which is a remaining portionof the second semiconductor substrate attached to the dielectric layer.

In another embodiment, the one or more free standing MEMS structuresincludes one or more comb structures, each of the comb structures beingconfigured to be movable from a first position to a second position. Atleast one of the comb structures is inter-digitated with a second combstructure, which is stationary.

In another embodiment, the one comb structure and the second combstructure form a capacitive sensing device, which is capable ofproviding a varying capacitance upon movement of the one or more freestanding MEMS structures responding to external acceleration.

In another embodiment, the CMOS device layer is formed using a standingCMOS process from a semiconductor foundry.

In another embodiment, the method also includes forming a sacrificiallayer overlying the one or more free standing MEMS structures.

In another embodiment, the method also includes forming an enclosurelayer overlying the sacrificial layer. The enclosure layer has one ormore openings to expose one or more portions of the sacrificial layer.

In another embodiment, the enclosure layer includes a titanium material,the titanium material being activated as a getter layer.

In another embodiment, the enclosure layer is selected from a metal, asemiconductor material, an amorphous silicon material, a dielectriclayer, or a combination of these layers.

In another embodiment, the method also includes removing the sacrificiallayer via an ashing process to form an open region between the one ormore free standing MEMS structures and the enclosure layer and formingan encapsulating layer overlying the enclosure layer to substantiallyseal the one or more free standing MEMS structures to form apredetermined environment within the open region.

In another embodiment, the encapsulating layer is selected from a metallayer, a spin on glass, spray on glass, amorphous silicon, a dielectriclayer, or any combination of these layers.

In another embodiment, the frequency range is radio frequency range fromkilo-hertz to giga-hertz.

In another embodiment, the method also includes forming one or more bondpad openings to expose one or more of bond pads coupled to the CMOSdevice layer.

According to an alternative embodiment, the invention provides a methodof forming a monolithic MEMS and integrated circuit device. The methodincludes providing a first semiconductor substrate having a firstsurface region and forming one or more CMOS integrated circuit deviceprovided on a CMOS integrated circuit device region overlying the firstsurface region. The CMOS integrated circuit device region has a CMOSsurface region. The method also includes forming a dielectric layeroverlying the CMOS surface region, and joining a second semiconductorsubstrate having a second surface region to the CMOS surface region bybonding the second surface region to the dielectric layer. The secondsemiconductor substrate includes a bulk substrate, an overlyinginsulating layer, and a single crystal device layer which includes thesecond surface region. The method also includes thinning the secondsemiconductor substrate to a desired thickness including the singlecrystal device layer, the insulating layer, and a portion of the bulksubstrate while maintaining attachment to the dielectric layer. Themethod also includes forming one or more MEMS structures within one ormore portions of the desired thickness of the second semiconductorsubstrate. The one or more MEMS structures are configured to besupported by one or more members integrally formed on the desiredthickness of the second semiconductor substrate to cause the one or moreMEMS structures to move in an oscillating manner characterized by afrequency range.

FIG. 15 is a simplified diagram of components of a micromachinedpressure sensor according to one embodiment of the present invention. Asdepicted, the diaphragm is either a continuous layer or an array ofsmaller diaphragm cells. To obtain high sensitivity of the microphone, alarge and thin diaphragm is essential. It is, however, difficult toachieve due to intrinsic stress of the diaphragm film. As shown in thecross section view, a corrugated structure is adopted as folded springs.The folded spring has a horizontal compliance that is used for stressrelief of the diaphragm film. The folder spring also has a verticalcompliance that is used for drum motion responding to a sound pressure.In the continuous diaphragm configuration, the corrugated structures areevenly distributed with local supporting posts. In the arrayconfiguration, the diaphragm in each cell has corrugated structures atthe edge and is anchored at the perimeter.

FIG. 16 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention. As depicted, a diaphragm with corrugated springs is overlyinga fully completed CMOS substrate. In one embodiment, the diaphragm isconsisted with a stack of thin films such as amorphous Silicon and metallayers. In another embodiment, the diaphragm is a low stress metal thinfilm such as Ti, TiN, or AlTi alloy. In another embodiment, thediaphragm is a thin layer of single crystal silicon. Lower electrodesare formed at the top of the top oxide of the CMOS substrate to form acapacitor with the diaphragm. Optional upper electrodes can be formed ontop of the diaphragm to form a differential output for increasedsensitivity. A thick layer of insulating material with fluid inlet holesis formed on top of the diaphragm to encapsulate the pressure sensor.

FIG. 17 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention. As depicted, there are two separated chambers for twoindependent media inlets. The top oxide has embedded fluid channels thatallow media 2 to flow from chamber 2 to the backside of the diaphragm inchamber 1.

FIG. 18 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention. As depicted, fluid channels formed within the siliconsubstrate to allow media 2 to flow from the bottom of the substrate tothe backside of the diaphragm.

FIG. 19 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention. As depicted, the diaphragm is made of a single crystalsilicon material. In one embodiment, a SOI wafer is bond to the CMOSsubstrate. After removing the bulk silicon and BOX, the SOI layer isthen released and becomes the diaphragm.

FIG. 20 is a simplified cross section diagram of components of amicromachined pressure sensor according to one embodiment of the presentinvention. As depicted, the encapsulation consisted of a thickinsulation layer and a conductive layer at the bottom. The bottomconductive layer becomes the upper electrode.

FIG. 21 is a simplified cross section diagram of fabrication processflow of a micromachined pressure sensor according to one embodiment ofthe present invention. As depicted, H2, He, or Argon is implanted in adesired depth in a silicon substrate. The silicon substrate is thenbonded to the CMOS substrate using low temperature bonding methods suchas covalent, eutectic, or other low temperature methods. Finally, acleaving step separates the thin silicon layer from the bulk substrate.The thin silicon layer becomes the diaphragm.

FIG. 22 is a simplified cross section diagram of fabrication processflow of a micromachined pressure sensor according to one embodiment ofthe present invention. As depicted, piezoresistors are implanted in asilicon substrate. H2, He, or Argon is then implanted in a desired depthin the silicon substrate. The silicon substrate is then bonded to theCMOS substrate using low temperature bonding methods such as covalent,eutectic, or other low temperature methods. Finally, a cleaving stepseparates the thin silicon layer from the bulk substrate. The thinsilicon layer becomes the diaphragm and the embedded piezoresistorssense strains induced by the deformation of the diaphragm due to anexternal pressure.

In an embodiment, the present invention provides a pressure sensingdevice that includes a substrate having a surface region, a CMOSintegrated circuit device layer overlying the surface region of thesubstrate, a diaphragm device having one or more surface regionsoverlying the CMOS integrated circuit device layer, and at least one ormore spring devices spatially disposed within a vicinity of the one ormore surface regions of the diaphragm device. Each of the folded springdevices is operably coupled to the one or more surface regions of thediaphragm device.

In an embodiment of the above pressure sending device, the one or morespring devices includes one or more folded spring devices. In anotherembodiment, the one or more spring devices are integrally formed withinthe one or more surface regions of the diaphragm device. In anotherembodiment, the one or more surface regions have a uniformity of 5percent and less variation. In yet another embodiment, the diaphragmdevice is characterized by a thickness of about one micron and less. Inanother embodiment, the diaphragm device is made of a semiconductormaterial, a metal material, or a dielectric material or any combinationof these.

In another embodiment, the one or more surface regions comprises anarray being defined by N and M, where N and M are integers greater than2. In another embodiment, the one or more surface regions includes atleast one surface region disposed within a center region of thediaphragm and a plurality of surface regions disposed radially aroundthe center region of the diaphragm.

In another embodiment, the above pressure sensing device also includesone or more lower electrodes operably coupled to one or more of thesurface regions. In another embodiment, the pressure sensing device alsoincludes one or more upper electrodes operably coupled to one or more ofthe surface regions to form one or more variable capacitor structures.In yet another embodiment, each of the one or more lower electrodescomprises one or more metal regions coupled to one or more of CMOSintegrated circuits in the CMOS integrated circuit device layer. Inanother embodiment, each of the one or more lower electrodes has one ormore metal regions overlying an upper dielectric layer provided on theCMOS integrated circuit device layer. In still another embodiment, thesensor also has one or more vent regions provided adjacent to one ormore of the lower electrodes, the one or more of the vent regionsextending to a cavity region within a portion substrate. In anotherembodiment, the pressure sensor also includes a housing member providedoverlying the diaphragm device to form a cavity region between thehousing member and the diaphragm device. The housing member has one ormore fluid openings to allow fluid to move between the cavity and aregion outside of the housing member.

According to another embodiment of the invention, a pressure sensingdevice includes a substrate having a surface region, a CMOS integratedcircuit device layer overlying the surface region of the substrate, anda diaphragm device having one or more surface regions overlying the CMOSintegrated circuit device layer. The pressure sensing device also has atleast one or more spring devices spatially disposed within a vicinity ofthe one or more surface regions of the diaphragm device. Each of thefolded spring devices is operably coupled to the one or more surfaceregions of the diaphragm device. The pressure sensing device also hastwo or more electrode devices operably coupled to each of the one ormore surface regions and at least one fluid channel formed between thetwo or more electrode devices.

In an embodiment of the above pressure sending device, the one or morespring devices comprises one or more folded spring devices. In anotherembodiment, the one or more spring devices are integrally formed withinthe one or more surface regions of the diaphragm device. In anotherembodiment, the one or more surface regions have a uniformity of 5percent and less variation. In another embodiment, the diaphragm deviceis characterized by a thickness of about one micron and less. In anotherembodiment, the diaphragm device is made of a semiconductor material, ametal material, or a dielectric material or any combination of these. Inanother embodiment, the one or more surface regions comprise an arraybeing defined by N and M, where N and M are integers greater than 2.

In another embodiment, the one or more surface regions comprises atleast one surface region disposed within a center region of thediaphragm and a plurality of surface regions disposed radially aroundthe center region of the diaphragm. In another embodiment, the pressuresending device also includes one or more fluid vent regions providedwithin a vicinity of the two or more electrode devices. In anotherembodiment, the pressure sending device further includes a housingmember provided overlying the diaphragm device to form a cavity regionbetween the housing member and the diaphragm device. The housing membercomprises one or more fluid openings to allow fluid to move between thefluid cavity and a region outside of the housing member. In anotherembodiment, the pressure sending device also includes a housing memberprovided overlying the diaphragm device to form a cavity region betweenthe housing member and the diaphragm device. The housing membercomprises one or more fluid openings to allow fluid to move between thefluid cavity and a region outside of the housing member. The pressuresensing device also has one or more fluid vent regions provided within avicinity of the two or more electrode devices, the one or more ventregions being in fluid communication with the fluid cavity.

According to yet another embodiment of the invention, a pressure sensingdevice includes a substrate having a surface region, a CMOS integratedcircuit device layer overlying the surface region of the substrate, adiaphragm device having at least a first surface region facing the CMOSintegrated circuit device layer and a second surface region opposite thefirst surface region, and at least one or more spring devices spatiallydisposed within a vicinity of the first surface region of the diaphragmdevice, each of the folded spring devices being operably coupled to thefirst surface region of the diaphragm device. The pressure sensingdevice also has two or more electrode devices operably coupled to thefirst surface region and at least one fluid channel formed between thetwo or more electrode devices. At least one of the fluid channels is incommunication with the first surface region of the diaphragm device. Thepressure sensing device also has a housing member provided overlying thediaphragm device to form a cavity region between the housing member andthe diaphragm device. The housing member includes one or more firstfluid openings to allow fluid to move between the cavity and a firstregion outside of the housing member. The one or more fluid openings arein communication with the second surface region of the diaphragm.

According to another embodiment of the invention, a pressure sensingdevice has a substrate having a surface region and a bulk region, a CMOSintegrated circuit device layer overlying the surface region of thesubstrate, and a diaphragm device having one or more surface regionsoverlying the CMOS integrated circuit device layer. The pressure sensingdevice also has at least one or more spring devices spatially disposedwithin a vicinity of the one or more surface regions of the diaphragmdevice, each of the folded spring devices being operably coupled to theone or more surface regions of the diaphragm device, and two or moreelectrode devices operably coupled to each of the one or more surfaceregions. The pressure sensing device also has at least one fluid channelformed between the two or more electrode devices, and a housing memberprovided overlying the diaphragm device to form a first cavity regionbetween a first portion the housing member and the diaphragm device andprovided to form a second cavity region between a second portion of thehousing member and a portion of the CMOS integrated circuit devicelayer. The housing member has one or more fluid openings to allow fluidto move between the first cavity and a region outside of the housingmember. Moreover, the pressure sensing device also has an isolationregion between the first cavity and the second cavity, and at least onefluid communication channel coupling the at least one fluid channel andthe second cavity. In an embodiment, the housing member has one or moreupper electrode members, each of which is operably coupled to each ofthe one or more surface regions.

In another embodiment, a pressure sensing device has a substrate havinga surface region and a bulk region, a CMOS integrated circuit devicelayer overlying the surface region of the substrate, and a diaphragmdevice having a first surface region facing and overlying the CMOSintegrated circuit device layer and a second surface region opposite thefirst surface region. At least one or more spring devices are spatiallydisposed within a vicinity of the first surface region of the diaphragmdevice. Each of the folded spring devices is operably coupled to thefirst surface region of the diaphragm device. Two or more electrodedevices are operably coupled to the first surface region. A first cavityregion is provided between the first surface region and the CMOSintegrated circuit device layer, the first cavity region beingsubstantially sealed and maintains a predetermined environment. Thepressure sensing device also has a housing member provided overlying thesecond surface region of the diaphragm device to form a second cavityregion between the housing member and the diaphragm device, the housingmember comprising one or more fluid openings to allow fluid to movebetween the second cavity and a region outside of the housing member.

In another embodiment, a pressure sensing device includes a substratehaving a surface region and a bulk region, a CMOS integrated circuitdevice layer overlying the surface region of the substrate, and adiaphragm device having one or more surface regions overlying the CMOSintegrated circuit device layer. The diaphragm device is formed from aportion of a single crystal silicon material. The pressure sensingdevice also has two or more electrode devices operably coupled to eachof the one or more surface regions.

In an embodiment, the above pressure sensing device also has a housingoverlying the diaphragm device and forming a cavity region between thehousing and the diaphragm device. In an embodiment, the above pressuresensing device also has a housing overlying the diaphragm device andforming a cavity region between the housing and the diaphragm device.Additionally, one or more portions of the housing form one or moresensing electrode devices.

In another embodiment, the above pressure sensing device also has f ahousing overlying the diaphragm device and forming a cavity regionbetween the housing and the diaphragm device. The housing includes anouter region and an inner region. One or more inner portions of theinner region of the housing form one or more sensing electrode devices.In an embodiment, the single crystal silicon material is provided from asilicon on insulator substrate (SOI). In an embodiment, the singlecrystal silicon material is provided from a cleaved portion of singlecrystal silicon material.

According to an alternative embodiment, the invention provides a methodof forming an integrated MEMS sensor and circuit device. The methodincludes providing a first semiconductor substrate having, a firstsurface region, one or more piezoresistor regions, and a cleave regionprovided between the first surface region and a bulk portion of thefirst semiconductor substrate. The method also includes joining thefirst surface region to a second surface region of a secondsemiconductor substrate. The second semiconductor substrate has a CMOSintegrated circuit layer, a dielectric layer overlying the CMOSintegrated circuit layer, and a cavity region provided within thedielectric layer. The method also includes releasing the bulk portion ofthe first semiconductor substrate while maintaining the first surfaceregion attached to the second surface region.

FIG. 23 is a simplified process flow of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. As depicted, an organic sacrificial material is deposited andpatterned to cover the sensitive portion of the integrated circuits. Ina specific embodiment, the sacrificial material is a photo resist thatis spin coated on the wafer and patterned using standard lithographymethods. A thin layer of metal or amorphous silicon is then conformallydeposited using a PVD process covering the surface of the wafer. A etchstep is followed to form release holes in the 1^(st) layer. Lastly, theorganic sacrificial material is then removed through the release holesby a dry O2 plasma ashing step. As depicted, the removal of thesacrificial material forms a cavity and a shell of the encapsulation.

FIG. 24 is a simplified process flow of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. As depicted, a 2^(nd) layer of the encapsulation is depositedonto the 1^(st) layer. The hermetic sealing methods include PVD,spin-on, or spray-on techniques. The sealing materials include metalsuch as Ti, TiN, amorphous silicon, spin-on-glass, spray-on-glass, or acombination of the above. The ambient during sealing is optimized andcontrolled to a desired spec that defines the sensor device ambientafter sealing. A getter material such as Ti can be deposited as the1^(st) layer of the encapsulation and activated later to achieve highvacuum and cleanness of the sensitive circuit ambient environment. Aftersealing the holes, an optional CVD dielectric material such as oxide ornitride can be added onto the encapsulation. Finally, a etch step opensthe bond pad region and expose the bond pads for wire bonding oroptional wafer bumping processes. The encapsulation and the cavity forma hermetic inert environment that shields the sensitive circuits from EMinterference, noise, moisture, gas, and corrosion from the outsideenvironment.

FIG. 25 is a simplified process flow of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. For applications that require thick encapsulation layer, itis desirable to form bond pads on top of the encapsulation layer insteadof etching down to open the bond pads on the IC layer. As depicted,after depositing the 2^(nd) layer of the encapsulation, a etch stepopens a region of bond pad area and expose the bond pads for asubsequent metallization step. The metal is then patterned to form bondpads for wire bonding or optional wafer bumping processes.

FIG. 26 is a simplified process flow of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. As depicted, an organic sacrificial material is deposited andpatterned to cover the sensitive portion of the integrated circuits. Thepatterning also forms holes or openings in the remaining organicmaterials. In a specific embodiment, the sacrificial material is a photoresist that is spin coated on the wafer and patterned using standardlithography methods. A thin layer of metal or amorphous silicon is thendeposited using a PVD process covering the surface of the wafer. Thedeposition recipe is optimized for non-conforming purpose, which haslittle step coverage of the sidewall of the exposed photoresisttrenches. After removing the organic sacrificial material, a 2^(nd)layer is then deposited to form the cavity and the encapsulation bysteps aforementioned. This flow uses only one mask and save processsteps.

FIG. 27 is a simplified cross section of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. As depicted, bond pad area is kept clear from encapsulationdepositions by a lift-off method or using shadow mask. This eliminatesthe need of etching thru the encapsulation layers to expose the bondpads.

FIG. 28 is a simplified cross section of a wafer-level encapsulation ofIntegration Circuits according to one embodiment of the presentinvention. As depicted, a seal ring is formed in IC layers and encirclesthe sensitive portion of the integrated circuits. The 1^(st) layer ofthe encapsulation is a conductive material and is electrically connectedwith the seal ring. As a result, the seal ring and the encapsulationform a metal cage that shields the sensitive circuits from EMinterference, noise, moisture, gas, and corrosion from the environment.

In an embodiment, a packaged integrated circuit device includes asemiconductor substrate having a surface region, a first portion and asecond portion. The packaged integrated circuit device also has one ormore CMOS integrated circuit devices fabricated on a first portion ofthe semiconductor substrate, and one or more sensitive integratedcircuit modules provided on a second portion of the semiconductorsubstrate. The packaged integrated circuit device also includes one ormore dielectric layers overlying the one or more CMOS integrated circuitdevices and the one or more sensitive integrated circuit modules to forma passivation structure overlying the one or more CMOS integratedcircuit devices and one or more sensitive integrated circuit modules.The packaged integrated circuit device also has a void volume overlyingthe one or more dielectric layers within a vicinity of at least the oneor more sensitive integrated circuit modules, and a barrier materialoverlying at least the void volume to hermetically seal the one or moresensitive integrated circuit modules while maintaining the void volumeoverlying the one or more dielectric layers.

In an embodiment, the above packaged integrated circuit device alsoincludes one or more dielectric layers overlying the barrier material.

In another embodiment, the barrier material is selected from one or moresemiconductor materials including amorphous silicon, polysilicon,silicon germanium, and germanium.

In another embodiment, the barrier material is selected from one or moremetal materials including tungsten, platinum, titanium, titaniumnitride, titanium tungsten, copper, tantalum, aluminum, or aluminumtitanium alloy.

In another embodiment, the barrier material is selected from one or moredielectric materials including an oxide, a nitride, oxynitride, spin-onglass, or spray-on glass.

In another embodiment, the barrier material comprises two or morematerials including a semiconductor, a metal, or a dielectric.

In another embodiment, the void volume includes air.

In another embodiment, the void volume includes an inert material.

In another embodiment, the void volume includes an inert gas.

In another embodiment, the void volume is characterized as a vacuumenvironment.

In another embodiment, the void volume is characterized by a dielectricconstant of 1.2 and less.

In another embodiment, the one or more sensitive integrated circuitmodules includes at least one or more integrated circuits including anRC timing circuit, LC timing circuit, RF circuit, or analog circuit.

According to another embodiment, a method for fabricating an integratedcircuit includes providing a first semiconductor substrate having afirst surface region, and forming one or more CMOS integrated circuitdevice provided on a CMOS integrated circuit device region overlying thefirst surface region. The CMOS integrated circuit device region has aCMOS surface region. The method also includes forming a dielectric layeroverlying the CMOS surface region, forming a sacrificial layer overlyinga portion of the dielectric layer, and forming an enclosure layeroverlying the sacrificial layer. The method also includes removing thesacrificial layer via an ashing process to form a void region betweenthe portion of the dielectric layer and the enclosure layer, and sealingthe void region in a predetermined environment.

In an embodiment of the above method, the CMOS device layer is formedusing a standard CMOS process from a semiconductor foundry.

In another embodiment, the enclosure layer comprises a titaniummaterial, which is activated as a getter layer.

In another embodiment, the enclosure layer is selected from a metal, asemiconductor material, an amorphous silicon material, a dielectriclayer, or a combination of these layers.

FIG. 29 is a simplified chart comparing silicon nanopillar battery toconventional battery according to one embodiment of the presentinvention. As shown, micromachined silicon nanopillars are adopted toreplace graphite anode. The silicon nanopillar anode has high energydensity since silicon holds 10× Lithium than graphite. The siliconnanopillar anode also has more surface area that can hold more activematerial into the electrode for fast charging and discharging. Siliconnanopillars are coated with LiCoO2 to replace LiCoO2 cathode, which moresurface area that has high energy capacity and fast charging anddischarging. Micromachined Silicon membrane with nanopillar to replacethe conventional separator made of thin plastic. Silicon is strongerthan steel and avoid damage of the separator that shorts electrodes andcauses fire. In addition, nanopillar controls ‘wetting’ of electrolytetherefore physical contact/separation of electrodes. Silicon membranepotentially contains active IC for controlling battery operations.Modularized control of nanopillar array allows intelligent batteryoperation for high efficiency. As a result, silicon membrane withnanopillars has no leakage, avoids deep discharge and extends batterylife.

FIG. 30 is a simplified diagram of components of a silicon nanopillarbattery according to one embodiment of the present invention. Asdepicted, the anode is made of micromachined silicon nanopillars,whereas the cathode is made of silicon nanopillars coated with LiCoO2.The separator is made of micromachined silicon membrane withnanopillars. The silicon membrane has perforated holes that allow theflow of the electrolyte between the anode and cathode. The nanopillar onthe silicon membrane controls ‘wetting’ of electrolyte and thereforephysical contact/separation of electrodes.

FIG. 31 is a simplified diagram of operating modes of a siliconnanopillar battery according to one embodiment of the present invention.As depicted, in battery ‘off’ state, nanopillars on the silicon membraneseparator are charged. As a result, the surface of the nanopillarsbecomes hydrophobic and electrolyte is separated from membrane. Inbattery partial ‘on’ state, a portion of the nanopillars on the siliconmembrane separator are charged. As a result, the surface of the chargednanopillars becomes hydrophilic and electrolyte is ‘wet’ to thenanopillars and free to flow through the holes in the silicon membrane.In battery full ‘on’ state, all the nanopillars on the silicon membraneseparator are charged. As a result, the surface of all the nanopillarsbecomes hydrophilic and electrolyte is ‘wet’ to the nanopillars and freeto flow through the entire holes in the silicon membrane.

An embodiment of the invention provides an energy source. The energysource includes an anode structure comprising one or more siliconnanopillars. Each of the plurality of silicon nanopillars has a diameterof less than about 300 nanometers and a length of greater than about 0.5microns, a cathode structure operably coupled to the anode structure,and a membrane region disposed between the anode structure and thecathode structure.

In an embodiment of the energy source described above, the anodestructure comprises one or more substrate structures. At least one ofthe substrate structures includes the one or more silicon nanopillars.

In another embodiment, the one or more nanopillars is essentially singlecrystal silicon.

In another embodiment, the one or more nanopillars is essentiallypolysilicon.

In another embodiment, the one or more nanopillars is essentiallyamorphous silicon.

In another embodiment, the one or more silicon nanopillars comprises athin oxide layer thereon.

In another embodiment, the cathode structure comprises one or moresilicon nanopillars.

In another embodiment, the cathode structure comprises one or moresilicon nanopillars. The one or more silicon nanopillars includes aLiCoO2 coating thereon.

In another embodiment, the separator comprises a silicon substrateincludes a plurality of perforations thereon. One or more of theperforations are capable of traversing one or more lithium ionstherethrough.

In another embodiment, the separator includes a silicon substrate havinga plurality of perforations thereon. One or more of the perforations arecapable of traversing one or more lithium ions therethrough. Theseparating also includes a plurality of nanopillars overlying one orboth of the surface regions.

In another embodiment, the separator is coupled to an electrical bias.

In another embodiment, the electrical bias is coupled to a controllerprovided on an integrated circuit device.

In another embodiment, the integrated circuit device is coupled to theenergy source.

In another embodiment, the energy source is a battery.

In another embodiment, the energy source also includes an electrolyteoperably coupled to the anode structure and the cathode structure.

In another embodiment, the separator is coupled to an electrical bias.The electrical bias is coupled to a controller provided on an integratedcircuit device, and the integrated circuit device is coupled to theenergy source; wherein the controller being configured to apply voltageto a selected number of the one or more nanopillars to cause theselected number of nanopillars to be an on or off state.

FIG. 32 illustrates electron and hole mobility for different crystalorientations. As shown in the prior art, electron mobility is highestfor a (100) silicon surface with a <110> channel direction, while holemobility is highest for a (110) silicon surface with a <110> channeldirection.

The following diagrams are merely examples, which should not undulylimit the scope of the claims herein. One of ordinary skill in the artwould recognize many variations, alternatives, and modifications.

FIG. 33 is a simplified cross-sectional diagram illustrating componentsof n-MOS transistor device according to one embodiment of the presentinvention.

As illustrated, the n-MOS transistors are fabricated using standard CMOSprocesses. The starting substrate is a (100) silicon substrate which hasthe highest mobility for electrons. The source and drain regions can beeither partially or fully depleted depending on applications. A shallowtrench isolation (STI) typically oxide is formed to electrically isolateadjacent transistors. After completing poly gates, oxide is depositedfollowed by a CMP step to planarize the device substrate.

FIG. 34 is a simplified cross-sectional diagram illustrating componentsof p-MOS transistor device according to one embodiment of the presentinvention. As illustrated, p-MOS transistors are fabricated in a similarmanner as the N transistors. The starting substrate, however, is a (110)silicon substrate which has the highest mobility for holes.

FIG. 35 is a simplified diagram illustrating a process of joining then-MOS and p-MOS transistor substrates. The joining methods include butnot limit to permanent bonding methods such as covalent, eutectic, glassfrit, SOG, and fusion. Merely by way of example, a surface activation byeither plasma or wet on both substrates is applied followed by a roomtemperature covalent bonding process.

FIG. 36 is a simplified diagram illustrating a process of thinning oneof the transistor substrates. In one embodiment, the p-MOS transistorsubstrate is a SOI wafer and the bulk of the P transistor wafer isremoved by methods such as grinding and polishing, followed by a wet ordry etch as showed stop on the BOX of the SOI. In another embodiment,the p-MOS transistor substrate is a regular wafer and the bulk of the Ptransistor wafer is removed by grinding and polishing while measuringthe remaining silicon thickness to control the final silicon thickness.Interconnects are formed vertically after the thinning

FIGS. 37-38 are simplified diagrams illustrating a process offabricating three dimensional transistor devices using a cleavingmethod. As depicted, p-MOS transistors are implanted in a (111) siliconsubstrate first. After finishing high temperature process steps such asoxidation and polysilicon deposition, an implant step implants H2, He orAr in a desired depth in the silicon substrate. The p-MOS transistorsubstrate is then bonded to the n-MOS transistor substrate. A cleavingstep separates the bulk of the p-MOS transistor substrate and leaves athin layer of silicon with p-MOS transistors overlying the n-MOStransistor substrate. Finally, STIs are formed between the p-MOStransistors for electrical isolation.

An embodiment of the invention provides a three-dimensional integratedcircuit device that includes a first substrate having a (110) crystalorientation comprising at least one or more PMOS devices thereon; and afirst dielectric layer overlying the one or more PMOS devices. Thethree-dimensional integrated circuit device also includes a secondsubstrate having a (100) crystal orientation comprising at least one ormore NMOS devices thereon; and a second dielectric layer overlying theone or more NMOS devices. The three-dimensional integrated circuitdevice also has an interface region coupling the first dielectric layerto the second dielectric layer to form a hybrid structure including thefirst substrate overlying the second substrate.

In an embodiment of the above three-dimensional integrated circuitdevice, the interface region characterized by a bonding material.

In another embodiment, the first substrate is single crystal siliconmaterial.

In another embodiment, the second substrate is single crystal siliconmaterial.

In another embodiment, the first substrate is cleaved.

In another embodiment, the second substrate is cleaved.

In another embodiment, the first substrate and the second substrate forma vertical integrated CMOS integrated circuit device.

FIG. 39 is a simplified cross section diagram of a microneedle biochipaccording to one embodiment of the present invention. As depicted, themicroneedles penetrate only the Stratum Corneum and Viable Epidermislayers, whereas the conventional macro needle penetrates to Dermis layerwhere pain receptor nerves reside. The microneedle chip samples bodyanalyte through extraction of interstitial fluid through themicroneedles for on-chip sensing. The microneedles are also used forreal-time drug delivery based on the sensing results.

FIG. 40 is a simplified cross section diagram of components of amicroneedle biochip according to one embodiment of the presentinvention. As depicted, the microneedle device is fabricated on an ICsubstrate. The microneedles are sharp tips with micro fluidic channelsinside. The microneedles are coupled to actuators that move microneedlesin out-of-plane movement. Fluidic reservoir is fabricated in the ICsubstrate as sample chamber for sensing and storage for fluidic medicinefor drug delivery. Fluidic channels are fabricated in the IC substratefor controlling fluidic medicine. Sensing elements are built on-chip todetect body analyte extracted by the microneedles. In one embodiment,glucose from the interstitial fluid of the epidermis diffuses throughmicroneedles into the reservoir. An integrated enzyme-basedelectrochemical glucose sensor measures the glucose concentration.On-chip integrated circuits enable real-time sensing and intelligentdrug delivery.

FIG. 41 is a simplified cross section diagram of components of amicroneedle biochip according to one embodiment of the presentinvention. As depicted, the microneedle device is in contact with askin. The actuators move the microneedles in an out-of-planedisplacement that penetrate into the Stratum Corneum and Viable Epidelayers. The actuation methods include not limited to: electrostatic,PZT, thermal. The micro fluidic channels in the microneedles extractinterstitial fluid for on-chip sensing and are also used for drugdelivery into the body. The depth of penetration can be adjustedintelligent by the on-chip integrated circuits for various skinthickness and sensing or drug delivery applications.

An embodiment of the invention provides an integrated biosensor andcircuit device that includes a semiconductor substrate comprising asurface region, a CMOS integrated circuit layer overlying the surfaceregion, and one or more dielectric layers overlying the CMOS integratedcircuit layer. The integrated biosensor and circuit device also includesa fluid chamber region overlying the CMOS integrated circuit layer, andone or more needle devices in communication with the fluid chamberregion. The one or more needle devices overlies the CMOS integratedcircuit layer. Each of the needle devices has fluid channel therein,which extends from a base region to a vicinity of a tip region. One ormore sensing devices are coupled to the one or more needle devices. Theone or more sensing devices are provided from the CMOS integratedcircuit device layer.

In an embodiment of the integrated biosensor and circuit device, the tipregion ranges from a few nanometers to about microns.

In another embodiment, the one or more sensing devices provided in thefluid chamber.

In another embodiment, the tip is made of a material selected fromsilicon, titanium nitride, titanium, or stainless steel.

In another embodiment, the one or more needle devices comprises aplurality of needle devices configured in an N by M array, where M is aninteger greater than 2.

In another embodiment, the integrated biosensor and circuit devicefurther includes a pump device in communication with the fluid chamber.

In another embodiment, the integrated biosensor and circuit devicefurther includes a drug source in communication with the fluid chamber.

In another embodiment, the integrated biosensor and circuit devicefurther includes one or more actuator devices in fluid communicationwith the fluid chamber. The one or more actuator devices are coupled toone or more drive devices. The one or more drive devices are selectedfrom at group consisting of one or more electrodes, one or more PZTdevices, one or more diaphragm devices, one or more thermal devices, orone or more magnetic devices.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

1. A three-dimensional integrated circuit device comprising: a firstsubstrate having a first crystal orientation and including: at least oneor more PMOS devices thereon; and a first dielectric layer overlying theone or more PMOS devices; a second substrate having a second crystalorientation and including: at least one or more NMOS devices thereon;and a second dielectric layer overlying the one or more NMOS devices;and an interface region coupling the first dielectric layer to thesecond dielectric layer to form a hybrid structure including the firstsubstrate overlying the second substrate.
 2. The device of claim 1wherein the interface region comprises a bonding material.
 3. The deviceof claim 3 wherein the bonding material includes a covalent, eutectic,glass frit, SOG, Thermal compression, or fusion bonding materials. 4.The device of claim 1 further comprising one or more shallow trenchisolation (STI) oxides formed to isolate adjacent transistors.
 5. Thedevice of claim 1 wherein the first crystal orientation is a (110)crystal orientation or a (111) crystal orientation.
 6. The device ofclaim 1 wherein the second crystal orientation is a (100) crystalorientation.
 7. The device of claim 1 wherein the first substrate andthe second substrate form a vertical integrated CMOS integrated circuitdevice.
 8. The device of claim 1 wherein the first substrate includesingle crystal silicon materials or substrate-on-insulator (SOI)materials.
 9. The device of claim 1 wherein the second substrate includesingle crystal silicon materials or substrate-on-insulator (SOI)materials.
 10. The device of claim 1 wherein the first substrate iscleaved.
 11. The device of claim 1 wherein the second substrate iscleaved.
 12. A method for fabricating a three-dimensional integratedcircuit device, the method comprising: providing a first substratehaving a first crystal orientation; forming at least one or more PMOSdevices overlying the first substrate; forming a first dielectric layeroverlying the one or more PMOS devices; providing a second substratehaving a second crystal orientation; forming at least one or more NMOSdevices overlying the second substrate; forming a second dielectriclayer overlying the one or more NMOS devices; and coupling the firstdielectric layer to the second dielectric layer to form a hybridstructure including the first substrate overlying the second substrate.13. The method of claim 12 wherein the first crystal orientationcomprises a (110) crystal orientation or a (111) crystal orientation.14. The method of claim 12 wherein the second crystal orientationcomprises a (100) crystal orientation.
 15. The method of claim 12wherein the coupling of the first and second dielectric layer comprisesa covalent, eutectic, glass frit, SOG, thermal compression, or fusionbonding process.
 16. The method of claim 12 further comprising formingone or more trench isolation (STI) oxides formed to isolate adjacenttransistors.
 17. The method of claim 12 further comprising thinning thefirst substrate via a grinding, polishing, etching, or cleaving process.18. The method of claim 12 wherein the forming of the one or more PMOStransistors comprises an implanting process in a (111) siliconsubstrate.
 19. The method of claim 18 wherein the implanting processcomprises implanting H₂, He, or Ar in a desired depth in the siliconsubstrate.
 20. The method of claim 12 further comprising forming one ormore vertical interconnects within one or more portions of the hybridstructure.